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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2008    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：136/0  |  提交时间：2010/03/09 GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL   Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 AlGaN  GaN template  A1N interlayer  MOCVD  crack  interference fringes