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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 发表日期：1998    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dependence of ultra-thin gate oxide reliability on surface cleaning approach 会议论文 5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998 Gao WY; Liu ZL; He ZJ 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 CHEMICAL TREATMENT  QUALITY  TECHNOLOGY  FILMS   The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process 会议论文 symposium on nitride semiconductors, at the 1997 mrs fall meeting, boston, ma, dec 01-05, 1997 Zheng LX; Liang JW; Yang H; Li JB; Wang YT; Xu DP; Li XF; Duan LH; Hu XW 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文 journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630 Wang HM; Zeng YP; Zhou HW; Kong MY 收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  HALL ELEMENTS  GAAS  MISORIENTATION  DISTORTION  LAYERS  MBE  SI  HETEROSTRUCTURES  GROWTH   Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE 期刊论文 journal of crystal growth, 1998, 卷号: 186, 期号: 1-2, 页码: 38-42 Wang HM; Fan TW; Wu J; Zeng YP; Dong JR; Kong MY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  CRITICAL LAYER THICKNESS  THREADING DISLOCATIONS  OVAL DEFECTS  HETEROSTRUCTURES  INXGA1-XAS  ENERGY  SI   Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540 Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ 收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12 Si1-xGex alloys  low temperature epitaxy  desorption  adsorption  surface morphology  growth kinetics  HYDROGEN DESORPTION  SI(100)  SI  SURFACTANT  GERMANIUM  MECHANISM  KINETICS  ALLOYS  SI2H6  GAS-SOURCE MBE   Electron irradiation and thermal annealing effect on GaAs solar cells 期刊论文 solar energy materials and solar cells, 1998, 卷号: 55, 期号: 4, 页码: 313-322 Xiang XB; Du WH; Chang XL; Liao XB 收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12 GaAs  solar cells  irradiation   Dependence of photoluminescence induced by carbon contamination on GeSi structure 期刊论文 journal of crystal growth, 1998, 卷号: 187, 期号: 2, 页码: 197-202 Guo LW; Shi JJ; Cheng WQ; Li YK; Huang Q; Zhou JM 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 SILICON  GROWTH  SUPERLATTICES   A study of the interface of CeO2/Si heterostructure grown by ion beam deposition 期刊论文 vacuum, 1998, 卷号: 51, 期号: 3, 页码: 397-401 Wu ZL; Huang DD; Yang XZ 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 X-RAY PHOTOELECTRON  EPITAXIAL-GROWTH  SILICON  SPECTROSCOPY  SURFACES  SI(111)  OXIDES  LAYERS  SI   Enhancement of the photoluminescence intensity of porous silicon by absorbed organic molecule 期刊论文 chinese science bulletin, 1998, 卷号: 43, 期号: 7, 页码: 616-616 Yin F; Li XP; Xiao XR; Zhang BW; Cao Y; Chen JR; Li GH; Han HX; Wang ZP 收藏  |  浏览/下载：24/0  |  提交时间：2010/08/12