Dependence of ultra-thin gate oxide reliability on surface cleaning approach

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	Dependence of ultra-thin gate oxide reliability on surface cleaning approach
	Gao WY ; Liu ZL ; He ZJ
	1998
会议名称	5th international conference on solid-state and integrated circuit technology
会议日期	oct 21-23, 1998
会议地点	beijing, peoples r china
关键词	CHEMICAL TREATMENT QUALITY TECHNOLOGY FILMS
页码	291-294
通讯作者	gao wy chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	in this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. it is demonstrated that chemical preoxide grown in h2so4/h2o2 (spm) solution prior to oxidation provides better oxide integrity than both hf-based solution dipping and preoxide grown in rca sc1 or sc2 solutions. it is also found that the oxides with spm preoxide exhibit better hot-carrier immunity than the rca cleaned oxides.
英文摘要	in this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. it is demonstrated that chemical preoxide grown in h2so4/h2o2 (spm) solution prior to oxidation provides better oxide integrity than both hf-based solution dipping and preoxide grown in rca sc1 or sc2 solutions. it is also found that the oxides with spm preoxide exhibit better hot-carrier immunity than the rca cleaned oxides.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:09z (gmt). no. of bitstreams: 1 2988.pdf: 265822 bytes, checksum: 8b84054c8fbbdbf31a07b1877194a828 (md5) previous issue date: 1998; chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst electr.; ieee electron devices soc.; ieee solid state circuits soc.; japan soc appl phys.; ursi commiss d.; iee, electr div, uk.; korea inst telemat & electr.; ieee beijing sect.; mat res soc.; natl nat sci fdn china.
会议录	1998 5th international conference on solid-state and integrated circuit technology proceedings
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	半导体材料
语种	英语
ISBN号	0-7803-4306-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13821]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao WY,Liu ZL,He ZJ. Dependence of ultra-thin gate oxide reliability on surface cleaning approach[C]. 见:5th international conference on solid-state and integrated circuit technology. beijing, peoples r china. oct 21-23, 1998.