Dependence of photoluminescence induced by carbon contamination on GeSi structure

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	Dependence of photoluminescence induced by carbon contamination on GeSi structure
	Guo LW ; Shi JJ ; Cheng WQ ; Li YK ; Huang Q ; Zhou JM
刊名	journal of crystal growth
	1998
卷号	187 期号:2 页码:197-202
关键词	SILICON GROWTH SUPERLATTICES
ISSN号	0022-0248
通讯作者	guo lw,chinese acad sci,inst phys,pob 603,beijing 100080,peoples r china.
中文摘要	we studied the dependence of photoluminescence induced by carbon contamination on the ge/gesi structure. it is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. there is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk si. where the impurity-active center is generated by high-energy electron (about several mev) irradiation. the quenching temperature of the photoluminescence from the impurity-active center is higher in our ge/gesi structure than in bulk si. the defect complex may serve as an impurity-active center for a possible application in making si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (c) 1998 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13218]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Guo LW,Shi JJ,Cheng WQ,et al. Dependence of photoluminescence induced by carbon contamination on GeSi structure[J]. journal of crystal growth,1998,187(2):197-202.
APA	Guo LW,Shi JJ,Cheng WQ,Li YK,Huang Q,&Zhou JM.(1998).Dependence of photoluminescence induced by carbon contamination on GeSi structure.journal of crystal growth,187(2),197-202.
MLA	Guo LW,et al."Dependence of photoluminescence induced by carbon contamination on GeSi structure".journal of crystal growth 187.2(1998):197-202.