Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures

	Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures
	Liu XY(刘新宇); Dong SX(董升旭); Bai Y(白云); Tang YD(汤益丹); Chen H(陈宏); Tian XL(田晓丽); Yang CY(杨成樾)
刊名	Chin. Phys. B
	2018-09-09
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18999]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu XY,Dong SX,Bai Y,et al. Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures[J]. Chin. Phys. B,2018.
APA	Liu XY.,Dong SX.,Bai Y.,Tang YD.,Chen H.,...&Yang CY.(2018).Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures.Chin. Phys. B.
MLA	Liu XY,et al."Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures".Chin. Phys. B (2018).