Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing

	Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing
	Bai Y(白云); Peng CY(彭朝阳); Tang YD(汤益丹); Wang YY(王弋宇); Liu XY(刘新宇); Li CZ(李诚瞻)
刊名	Materials Science Forum
	2017-05-15
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18021]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Bai Y,Peng CY,Tang YD,et al. Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing[J]. Materials Science Forum,2017.
APA	Bai Y,Peng CY,Tang YD,Wang YY,Liu XY,&Li CZ.(2017).Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing.Materials Science Forum.
MLA	Bai Y,et al."Re-Investigation of SiC/SiO2 Interface Passivation by Nitrogen Annealing".Materials Science Forum (2017).