QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Flexible blue-green and white light-emitting electrochemical cells based on cationic iridium complex 期刊论文 ORGANIC ELECTRONICS, 2016, 卷号: 28, 页码: 314-318 作者:  Wu, Jiaqi;  Li, Fushan;  Zeng, Qunying;  Nie, Chen;  Ooi, Poh Choon 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/21 Flexible  Light-emitting electrochemical cells  Cationic iridium complexes  Bending test   Room temperature pH-dependent ammonia gas sensors using graphene quantum dots 期刊论文 SENSORS AND ACTUATORS B-CHEMICAL, 2016, 卷号: 222, 页码: 763-768 作者:  Chen, Wei;  Li, Fushan;  Ooi, Poh Choon;  Ye, Yun;  Kim, Tae Whan 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/21 MWCNTs  Graphene quantum dots  Ammonia gas sensor   Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers 期刊论文 ORGANIC ELECTRONICS, 2016, 卷号: 38, 页码: 379-383 作者:  Ooi, Poh Choon;  Lin, Jian;  Kim, Tae Whan;  Li, Fushan 收藏  |  浏览/下载：7/0  |  提交时间：2019/11/21 Tristable switching  Poly(methyl methacrylate)  Electrical characteristic  Graphene quantum dot  Conduction mechanisms  Filament   Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers 期刊论文 ORGANIC ELECTRONICS, 2016, 卷号: 32, 页码: 115-119 作者:  Ooi, Poh Choon;  Lin, Jian;  Kim, Tae Whan;  Li, Fushan 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/21 Conduction mechanism  Nonvolatile memory device  Electrical characteristic  Graphene quantum dot  Flexible  Polymethylsilsesquioxane   Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots 期刊论文 JOURNAL OF ELECTRONIC MATERIALS, 2015, 卷号: 44, 页码: 3962-3966 作者:  Ma, Zehao;  Ooi, Poh Choon;  Li, Fushan;  Yun, Dong Yeol;  Kim, Tae Whan 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21 polymethylsilsesquioxane  conduction mechanisms  Nonvolatile memory  CdSe/ZnS quantum dot  electrical bistability   Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 页码: 1212-1214 作者:  Lin, Jian;  Ooi, Poh Choon;  Li, Fushan;  Guo, Tailiang;  Kim, Tae Whan 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21 flexible  non-volatile memory  Graphene quantum dots  silver nanowires   Electromagnetic induction heating for single crystal graphene growth: morphology control by rapid heating and quenching 期刊论文 SCIENTIFIC REPORTS, 2015, 卷号: 5 作者:  Wu, Chaoxing;  Li, Fushan;  Chen, Wei;  Veeramalai, Chandrasekar Perumal;  Ooi, Poh Choon 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/21 Solution-processed flexible blue organic light emitting diodes using graphene anode 期刊论文 VACUUM, 2015, 卷号: 121, 页码: 70-74 作者:  Nie, Chen;  Li, Fushan;  Wu, Jiaqi;  Zeng, Qunying;  Ooi, Poh Choon 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/21 Graphene  Flexible device  Solution process  PFO  Zinc oxide   Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 53 作者:  Ooi, Poh Choon;  Li, Fushan;  Veeramalai, Chandrasekar Perumal;  Guo, Tailiang 收藏  |  浏览/下载：3/0  |  提交时间：2019/11/21