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科研机构
半导体研究所 [18]
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期刊论文 [15]
会议论文 [3]
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2010 [1]
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半导体物理 [18]
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Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition
期刊论文
vacuum, 2010, 卷号: 84, 期号: 11, 页码: 1280-1286
Zhu BL (Zhu B. L.)
;
Zhao XZ (Zhao X. Z.)
;
Su FH (Su F. H.)
;
Li GH (Li G. H.)
;
Wu XG (Wu X. G.)
;
Wu J (Wu J.)
;
Wu R (Wu R.)
收藏
  |  
浏览/下载:89/2
  |  
提交时间:2010/07/05
ZnO
Pulsed laser deposition (PLD)
Annealing treatment
Photoluminescence (PL)
OXIDE THIN-FILMS
SUBSTRATE-TEMPERATURE
OXYGEN-PRESSURE
ELECTRICAL-PROPERTIES
PLD TECHNIQUE
AL FILMS
EMISSION
Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:213/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:72/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
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  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
The study of high temperature annealing of a-SiC : H films
期刊论文
advanced materials forum iii, 2006, 卷号: pts 1 and 2 514-516, 期号: 0, 页码: 18-22
Zhang S
;
Hu Z
;
Raniero L
;
Liao X
;
Ferreira I
;
Fortunato E
;
Vilarinho P
;
Perreira L
;
Martins R
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2010/04/11
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW
;
Dong, ZY
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  |  
浏览/下载:220/68
  |  
提交时间:2010/03/29
ENCAPSULATED CZOCHRALSKI INP
SEMICONDUCTOR COMPOUND-CRYSTALS
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
DEEP-LEVEL DEFECTS
ANNEALING AMBIENT
POINT-DEFECTS
FE
PHOSPHIDE
DONORS
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
neutron irradiation
annealing
defects in silicon
SPECTRA
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