QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 作者:  Han PD 收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29 metalorganic chemical vapor deposition  semiconducting III-V materials  DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES  CARRIER CONFINEMENT  EFFECT TRANSISTORS  PHOTOLUMINESCENCE  MOBILITY  HETEROJUNCTION  INTERFACE  HFETS   Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Tan LW; Wang J; Wang QY; Yu YH; Lin LY 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 EPITAXIAL-GROWTH  AL2O3  SI   Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Lei HB; Yang QQ; Ou HY; Wang QM 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 Er-doped silicon  photoluminescence  energy transfer  AL2O3 WAVE-GUIDES  ER  ELECTROLUMINESCENCE  EPITAXY  GAAS   High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Chen LH; Xu ZT; Ma XY; Zhang JM; Yang GW; Xu JY 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 high power  Al-free laser  communication  EPITAXY   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 self-assembled quantum dots  InP substrate  high index  In(Ga,Al)As/InAlAs/InP  MBE  MOLECULAR-BEAM-EPITAXY  VAPOR-PHASE EPITAXY  GAAS  ISLANDS  PHOTOLUMINESCENCE  INP(001)  GROWTH  LASERS