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Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si 期刊论文
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2000, 卷号: 160, 期号: 1, 页码: 190-193
Li JM; Gao M; Duan XF; Wang FL
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
The formation and characteristics of Si1-xCx alloys in Si crystals by means of implantation of cions with different doses 期刊论文
acta physica sinica, 2000, 卷号: 49, 期号: 11, 页码: 2210-2213
Wang YS; Li JM; Jin YF; Wang YT; Lin LY
收藏  |  浏览/下载:59/0  |  提交时间:2010/08/12


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