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	Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si
	Li JM ; Gao M ; Duan XF ; Wang FL
刊名	nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
	2000
卷号	160期号:1页码:190-193
关键词	silicon ion implantation electrical properties of semiconductors defect ION-IMPLANTATION SILICON
ISSN号	0168-583x
通讯作者	li jm,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china.
中文摘要	proton-implanted and annealed p-type si wafers were investigated by using both transmission electron microscopy and spreading resistivity probe. the novel pn junction [li et al., mat. res. sec. symp, proc. 396 (1996) 745], as obtained by using n-type si subjected to the process as this work, was not observed in the p-type si wafers in this work. a drop of superficial resistivity in the sample was found and is explained by the proposed models interpreting the novel pn junction. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12738]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li JM,Gao M,Duan XF,et al. Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2000,160(1):190-193.
APA	Li JM,Gao M,Duan XF,&Wang FL.(2000).Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,160(1),190-193.
MLA	Li JM,et al."Properties of proton-implanted p-type Si: supports for the models explaining a novel p-n junction in Si".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 160.1(2000):190-193.

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