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科研机构
半导体研究所 [39]
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期刊论文 [37]
会议论文 [2]
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2011 [4]
2010 [1]
2009 [1]
2008 [3]
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2006 [5]
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半导体材料 [39]
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The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films
期刊论文
optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115
Hao HY
;
Xing J
;
Li WM
;
Zeng XB
;
Kong GL
;
Liao XB
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  |  
浏览/下载:81/3
  |  
提交时间:2011/07/06
Nanocrystalline silicon thin films
Structure
Photoelectrical properties
Stability
MICROCRYSTALLINE SILICON
TRANSITION FILMS
SOLAR-CELLS
HYDROGEN
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows
期刊论文
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.
;
Chen, Y.H.
;
Zhang, B.
;
Liu, X.L.
;
Yang, S.Y.
;
Zhang, W.F.
;
Wang, Z.G.
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  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Absorption
Absorption spectroscopy
Crystal atomic structure
Epitaxial growth
Metallorganic chemical vapor deposition
Optical properties
Organic chemicals
Strontium alloys
Strontium titanates
X ray diffraction
Zinc sulfide
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
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浏览/下载:47/5
  |  
提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.)
;
Jiang Y (Jiang Y.)
;
Zhang XW (Zhang X. W.)
;
Yin ZG (Yin Z. G.)
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  |  
浏览/下载:14/0
  |  
提交时间:2010/11/14
BARRIER STRUCTURE
MAGNETIC-FIELD
POLARIZATION
CONDUCTANCE
DEVICE
Effect of silver growth temperature on the contacts between Ag and ZnO thin films
期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:
Li XK
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  |  
浏览/下载:90/1
  |  
提交时间:2010/03/08
ZnO
Schottky barrier
interface
MSM structure
Electronic structures of wurtzite ZnO, BeO, MgO and p-type doping in Zn1-xYxO (Y = Mg, Be)
期刊论文
computational materials science, 2008, 卷号: 44, 期号: 1, 页码: 72-78
Xu, Q
;
Zhang, XW
;
Fan, WJ
;
Li, SS
;
Xia, JB
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  |  
浏览/下载:45/0
  |  
提交时间:2010/03/08
Density functional theory
Electronic structure
Alloy
Doping
Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 1, 页码: art. no. 013106
Zhou, ZY
;
Tang, CG
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:64/0
  |  
提交时间:2010/03/08
FINE-STRUCTURE
QUANTUM-WELLS
GAAS/ALAS SUPERLATTICES
SEMICONDUCTORS
TEMPERATURE
HOLE
Influence of different interlayers on growth mode and properties of InN by MOVPE
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ
;
Liu, XL
;
Kang, TT
;
Hu, WG
;
Yang, SY
;
Jiao, CM
;
Zhu, QS
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  |  
浏览/下载:51/3
  |  
提交时间:2010/03/08
DEFECT STRUCTURE
EPITAXIAL GAN
BAND-GAP
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Gao FB (Gao Fubao)
;
Chen NF (Chen NuoFu)
;
Liu L (Liu Lei)
;
Zhang XW (Zhang X. W.)
;
Wu JL (Wu Jinliang)
;
Yin ZG (Yin Zhigang)
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  |  
浏览/下载:37/0
  |  
提交时间:2010/03/29
crystal structure
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