QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008) 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2017 Liu, Li-Feng; Kang, Jin-Feng; Tang, Hao; Xu, Nuo; Sun, Xiao; Chen, Chen; Sun, Bing; Wang, Yi; Liu, Xiao-Yan; Zhang, Xing; Han, Ru-Qi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device 其他 2009-01-01 Sun, Bing; Liu, Lifeng; Xu, Nuo; Gao, Bin; Wang, Yi; Han, Dedong; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 OXIDE DIODES   The effect of current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device 期刊论文 Japanese Journal of Applied Physics, 2009 Sun, Bing; Liu, Lifeng; Xu, Nuo; Gao, Bin; Wang, Yi.; Han, Dedong; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03 Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories 期刊论文 应用物理学快报, 2008 Xu, Nuo; Liu, Lifeng; Sun, Xiao; Liu, Xiaoyan; Han, Dedong; Wang, Yi; Han, Ruqi; Kang, Jinfeng; Yu, Bin 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 COMPLEX   Gd doping improved resistive switching characteristics of TiO2 -based resistive memory devices 期刊论文 Japanese Journal of Applied Physics, 2008 Liu, Li-Feng; Kang, Jin-Feng; Xu, Nuo; Sun, Xiao; Chen, Chen; Sun, Bing; Wang, Yi; Liu, Xiao-Yan; Zhang, Xing; Han, Ru-Qi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices 其他 2008-01-01 Liu, Li-Feng; Kang, Jin-Feng; Xu, Nuo; Sun, Xiao; Chen, Chen; Sun, Bing; Wang, Yi; Liu, Xiao-Yan; Zhang, Xing; Han, Ru-Qi 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 resistive memory  TiO2  Gd doping  FILMS