Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008) | |
Liu, Li-Feng ; Kang, Jin-Feng ; Tang, Hao ; Xu, Nuo ; Sun, Xiao ; Chen, Chen ; Sun, Bing ; Wang, Yi ; Liu, Xiao-Yan ; Zhang, Xing ; Han, Ru-Qi | |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS |
2017 | |
DOI | 10.7567/JJAP.56.109201 |
英文摘要 | SCI(E); CORRECTION; 10; 56 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/470684] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Liu, Li-Feng,Kang, Jin-Feng,Tang, Hao,et al. Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2017. |
APA | Liu, Li-Feng.,Kang, Jin-Feng.,Tang, Hao.,Xu, Nuo.,Sun, Xiao.,...&Han, Ru-Qi.(2017).Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008).JAPANESE JOURNAL OF APPLIED PHYSICS. |
MLA | Liu, Li-Feng,et al."Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices (vol 47, pg 2710, 2008)".JAPANESE JOURNAL OF APPLIED PHYSICS (2017). |
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