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Temperature dependence of photogalvanic effect in GaAs/AlGaAs two-dimensional electron gas at interband and intersubband excitation 期刊论文
Journal of Applied Physics, 2017, 卷号: 121, 页码: 193901
作者:  X. L. Zeng;  J. L. Yu;  S. Y. Cheng;  Y. F. Lai, Y. H. Chen;  W. Huang
收藏  |  浏览/下载:36/0  |  提交时间:2018/05/23
Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
作者:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao
收藏  |  浏览/下载:34/0  |  提交时间:2018/05/30
Separation of the intrinsic and extrinsic mechanisms of the photo-induced anomalous Hall effect 期刊论文
Physica E, 2017, 卷号: 90, 页码: 55–60
作者:  J.L. Yu;  Y.H. Chen;  S.Y. Cheng;  X.L. Zeng;  Y. Liu
收藏  |  浏览/下载:15/0  |  提交时间:2018/05/23
Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
scientific reports, 2015, 卷号: 5, 页码: 14386
X. Rong; X. Q. Wang; G. Chen; X. T. Zheng; P. Wang; F. J. Xu; Z. X. Qin; N. Tang; Y. H. Chen; L. W. Sang; M. Sumiya; W. K. Ge; B. Shen
收藏  |  浏览/下载:25/0  |  提交时间:2016/03/18
In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy 期刊论文
Journal of Applied Physics, 2013, 卷号: 113, 期号: 8, 页码: 083504- 083504-5
J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao
收藏  |  浏览/下载:14/0  |  提交时间:2014/02/12
Electrical transport properties of boron-doped single-walled carbon nanotubes 期刊论文
journal of applied physics, 2013, 卷号: 113, 期号: 5, 页码: 054313
Li, Y. F.; Wang, Y.; Chen, S. M.; Wang, H. F.; Kaneko, T.; Hatakeyama, R.
收藏  |  浏览/下载:14/0  |  提交时间:2013/09/22
Photoluminescence properties of porous InP filled with ferroelectric polymers 期刊论文
applied physics a-materials science & processing, 2013, 卷号: 111, 期号: 3, 页码: 695-699
Jia, C. H.; Chen, Y. H.; Jiang, Y. C.; Liu, F. Q.; Qu, S. C.; Zhang, W. F.; Wang, Z. G.
收藏  |  浏览/下载:13/0  |  提交时间:2013/08/27
Intrinsic photoinduced anomalous Hall effect in insulating GaAs_AlGaAs quantum wells at room temperature 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 20, 页码: 202408 - 202408-5
J. L. Yu, Y. H. Chen, Y. Liu, C. Y. Jiang, H. Ma, L. P. Zhu, X. D. Qin
收藏  |  浏览/下载:18/0  |  提交时间:2014/03/18
1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure. 期刊论文
Optics Letters, 2013, 卷号: 38, 期号: 22, 页码: 4868-4871
Wang H, Mi J, Zhou X, Meriggi L, Steer M, Cui B, Chen W, Pan J, Ding Y.
收藏  |  浏览/下载:15/0  |  提交时间:2014/03/18
Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method 期刊论文
photonics technology letters, 2013, 卷号: 25, 期号: 12, 页码: 1180 - 1183
Yuan, L. ,Tao, L.; Yu, H.; Chen, W.; Lu, D.; Li, Y.; Ran, G.; Pan, J.
收藏  |  浏览/下载:12/0  |  提交时间:2014/03/19


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