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XPS study of impurities in Si-doped AlN film 期刊论文
surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:28/0  |  提交时间:2017/03/10
The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载:14/0  |  提交时间:2016/03/23
High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 13, 页码: art.no.131104
Han Q (Han Q.); Niu ZC (Niu Z. C.); Peng LH (Peng L. H.); Ni HQ (Ni H. Q.); Yang XH (Yang X. H.); Du Y (Du Y.); Zhao H (Zhao H.); Wu RH (Wu R. H.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载:34/0  |  提交时间:2010/04/11


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