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Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain 期刊论文
ieee electron device letters, 2012, 卷号: 33, 期号: 5, 页码: 634-636
Han, GQ; Su, SJ; Zhou, Q; Guo, PF; Yang, Y; Zhan, CL; Wang, LX; Wang, W; Wang, QM; Xue, CL; Cheng, BW; Yeo, YC
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/17
Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy 期刊论文
solid state communications, 2012, 卷号: 152, 期号: 11, 页码: 938-940
Shi, K; Zhang, PF; Wei, HY; Jiao, CM; Li, CM; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：31/0  |  提交时间：2013/03/17
Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Wang LX (Wang, Lanxiang); Su SJ (Su, Shaojian); Wang W (Wang, Wei); Yang Y (Yang, Yue); Tong Y (Tong, Yi); Liu B (Liu, Bin); Guo PF (Guo, Pengfei); Gong X (Gong, Xiao); Zhang GZ (Zhang, Guangze); Xue CL (Xue, Chunlai); Cheng BW (Cheng, Buwen); Han GQ (Han, Genquan); Yeo YC (Yeo, Yee-Chia)
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/27
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.38401
作者:  Wang KF;  Yang XG;  Yang T
收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05
Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 11, 页码: 113509
Shi K (Shi K.); Zhang PF (Zhang P. F.); Wei HY (Wei H. Y.); Jiao CM (Jiao C. M.); Jin P (Jin P.); Liu XL (Liu X. L.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22
Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者:  Cao YL;  Yang T
收藏  |  浏览/下载：18/0  |  提交时间：2011/07/05
The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文
journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356
Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/22
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  Yang T
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：140/24  |  提交时间：2010/09/07
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13

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