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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文 scientific reports, 2014, 卷号: 4, 页码: 6416 Feng, YX; Wei, HY; Yang, SY; Chen, Z; Wang, LS; Kong, SS; Zhao, GJ; Liu, XL 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 026801 Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20 Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 19, 页码: 193704 Li, HJ; Zhao, GJ; Liu, GP; Wei, HY; Jiao, CM; Yang, SY; Wang, LS; Zhu, QS 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 10-14 Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire 期刊论文 chinese physics letters, 2012, 卷号: 29, 期号: 11, 页码: 117103 Zhao GJ (Zhao Gui-Juan); Li ZW (Li Zhi-Wei); Wei HY (Wei Hong-Yuan); Liu GP (Liu Gui-Peng); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26 Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2012, 卷号: 29, 期号: 2, 页码: 26801 Sang, L; Liu, JM; Xu, XQ; Wang, J; Zhao, GJ; Liu, CB; Gu, CY; Liu, GP; Wei, HY; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/17 Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 82101 Liu, GP; Wu, J; Zhao, GJ; Liu, SM; Mao, W; Hao, Y; Liu, CB; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17 Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 16, 页码: 162102 Liu, GP; Wu, J; Lu, YW; Zhao, GJ; Gu, CY; Liu, CB; Sang, L; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 10-14 Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383 Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG 收藏  |  浏览/下载：63/0  |  提交时间：2010/04/11 two-dimensional electron gas  quantum Hall effect  SdH oscillations  persistent photoconductivity  HETEROSTRUCTURES  ALXGA1-XAS  SCATTERING  LIFETIME  MOBILITY  GAAS  TE