Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer

	Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer
	Wang, JX ; Wang, LS ; Yang, SY ; Li, HJ ; Zhao, GJ ; Zhang, H ; Wei, HY ; Jiao, CM ; Zhu, QS ; Wang, ZG
刊名	chinese physics b
	2014
卷号	23 期号:2 页码:026801
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26053]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang, JX,Wang, LS,Yang, SY,et al. Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer[J]. chinese physics b,2014,23(2):026801.
APA	Wang, JX.,Wang, LS.,Yang, SY.,Li, HJ.,Zhao, GJ.,...&Wang, ZG.(2014).Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer.chinese physics b,23(2),026801.
MLA	Wang, JX,et al."Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer".chinese physics b 23.2(2014):026801.