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Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者:  J. YANG;  D. G. ZHAO;  D. S. JIANG;  X. LI;  F. LIANG
收藏  |  浏览/下载：23/0  |  提交时间：2018/11/30
Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN
收藏  |  浏览/下载：20/0  |  提交时间：2018/07/11
Different annealing temperature suitable for different Mg doped P-GaN 期刊论文
Superlattices and Microstructures, 2017, 卷号: 104, 期号: 2017, 页码: 63-68
作者:  S.T. Liu;  J. Yang;  D.G. Zhao;  D.S. Jiang;  F. Liang
收藏  |  浏览/下载：28/0  |  提交时间：2018/07/11
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载：25/0  |  提交时间：2018/07/11
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
journal of alloys and compounds, 2015, 卷号: 625, 页码: 266–270
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
收藏  |  浏览/下载：24/0  |  提交时间：2016/03/23
Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
optics express, 2015, 卷号: 23, 期号: 12, 页码: 15935
W. Liu; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; M. Shi; D. M.Zhao; X. Li; J. P. Liu; S. M. Zhang; H. Wang; H. Yang; Y. T. Zhang; G. T.Du
收藏  |  浏览/下载：19/0  |  提交时间：2016/03/23
A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold 期刊论文
superlattices and microstructures, 2015, 卷号: 80, 期号: 2015, 页码: 111–117
X. Li; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; M. Shi; D.M. Zhao; W. Liu; J.J. Zhu; S.M. Zhang; H. Yang
收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 16, 页码: 163708
Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M.; Zhang, B. S.; Liu, J. P.; Yang, H.
收藏  |  浏览/下载：16/0  |  提交时间：2015/03/19
Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
收藏  |  浏览/下载：21/0  |  提交时间：2014/04/30
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09

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