The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

	The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN
	Li, X. J. ; Zhao, D. G. ; Jiang, D. S. ; Liu, Z. S. ; Chen, P. ; Zhu, J. J. ; Le, L. C. ; Yang, J. ; He, X. G. ; Zhang, S. M. ; Zhang, B. S. ; Liu, J. P. ; Yang, H.
刊名	journal of applied physics
	2014
卷号	116 期号:16 页码:163708
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26024]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Li, X. J.,Zhao, D. G.,Jiang, D. S.,et al. The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN[J]. journal of applied physics,2014,116(16):163708.
APA	Li, X. J..,Zhao, D. G..,Jiang, D. S..,Liu, Z. S..,Chen, P..,...&Yang, H..(2014).The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN.journal of applied physics,116(16),163708.
MLA	Li, X. J.,et al."The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN".journal of applied physics 116.16(2014):163708.