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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306
Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui)
收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05
External Electric Field Manipulations on Structural Phase Transition of Vanadium Dioxide Nanoparticles and Its Application in Field Effect Transistor 期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 47, 页码: 23558-23563
Li WW (Li W. W.); Zhu JJ (Zhu J. J.); Liang JR (Liang J. R.); Hu ZG (Hu Z. G.); Liu J (Liu J.); Chen HD (Chen H. D.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：12/0  |  提交时间：2012/02/21
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114215
Zeng C (Zeng Chang); Zhang SM (Zhang Shu-Ming); Ji L (Ji Lian); Wang HB (Wang Huai-Bing); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Cao Q (Cao Qing); Chong M (Chong Ming); Duan LH (Duan Li-Hong); Wang H (Wang Hai); Shi YS (Shi Yong-Sheng); Liu SY (Liu Su-Ying); Yang H (Yang Hui); Chen LH (Chen Liang-Hui)
收藏  |  浏览/下载：43/0  |  提交时间：2010/12/05
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
作者:  Zhu JJ;  Jiang DS;  Zhao DG;  Deng Y;  Wu LL
收藏  |  浏览/下载：54/2  |  提交时间：2011/07/05
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08
Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
作者:  Ji L;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：60/5  |  提交时间：2010/03/08
MOCVD growth of InN using a GaN buffer 期刊论文
superlattices and microstructures, 2008, 卷号: 43, 期号: 2, 页码: 81-85
作者:  Yang H;  Wang LL;  Wang H;  Yang H;  Zhu JJ
收藏  |  浏览/下载：51/1  |  提交时间：2010/03/08
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106
作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM
收藏  |  浏览/下载：52/0  |  提交时间：2010/03/29

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