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科研机构
上海大学 [27]
内容类型
期刊论文 [27]
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2018 [4]
2017 [7]
2016 [9]
2015 [6]
2014 [1]
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专题:上海大学
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Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
B doping concentration
boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)
negative bias illumination stress (NBIS) stability
solution process
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:
Zhao, Cheng-Yu[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/04/24
ZrO2 gate insulator
lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)
solution process
stability
High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: 13, 页码: 214-220
作者:
Li, Jun[1]
;
Huang, Chuan-Xin[2]
;
Zhao, Cheng-Yu[3]
;
Ding, Xingwei[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/24
ZTO TFTs
ALD ZrO2
Stability
Density of States
The material properties of novel boron doped InZnO thin films by solution process and its application in thin film transistors with enhanced thermal stability
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 377-386
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhou, You-Hang[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/04/22
BInZnO thin film
Oxygen vacancy
Thermal stability
Solution process
Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 109, 页码: 852-859
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Zhao, Cheng-Yu[4]
;
Zhu, Wen-Qing[5]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/24
Atomic layer deposition
ZrA10(x) gate insulator
ZTO TFTs
PBS stability
A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs
期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 221-227
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhu, Wen-Qing[3]
;
Zhang, Jian-Hua[4]
;
Jiang, Xue-Yin[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
ALD Al2O3
DOSs
oxide semiconductor
transistor
TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130
作者:
Fu, Yi-Zhou[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/04/24
Oxygen partial pressure
TiSiOx gate insulator
InGaZnO-TFTs
Density of states
Novel phenomenon of magnetism and superconductivity in Fe-doped superconductor Bi4-xFexO4S3 (0 <= x <= 0.1)
期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 卷号: 123
作者:
Li, Qing[1]
;
Wang, Difei[2]
;
Feng, Zhenjie[3]
;
Yu, Chuan[4]
;
Chu, Hao[5]
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/04/24
Realization of solution-processed semiconducting single-walled carbon nanotubes thin film transistors with atomic layer deposited ZrAlOx gate insulator
期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 110
作者:
Huang, Chuan-Xin[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Zhao, Cheng-Yu[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/04/24
Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 2216-2220
作者:
Zhao, Cheng-Yu[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Magnesium-doped indium oxide (MgInO)
thin-film transistors (TFTs)
Mg doping concentration
solution process
stability
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