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	Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors
	Zhao, Cheng-Yu[1]; Li, Jun[2]; Zhong, De-Yao[3]; Huang, Chuan-Xin[4]; Zhang, Jian-Hua[5]; Li, Xi-Feng[6]; Jiang, Xue-Yin[7]; Zhang, Zhi-Lin[8]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2017
卷号	64页码:2216-2220
关键词	Magnesium-doped indium oxide (MgInO) thin-film transistors (TFTs) Mg doping concentration solution process stability
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2190086
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Shanghai, Peoples R China. 6.[6]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Shanghai, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, Cheng-Yu[1],Li, Jun[2],Zhong, De-Yao[3],et al. Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64:2216-2220.
APA	Zhao, Cheng-Yu[1].,Li, Jun[2].,Zhong, De-Yao[3].,Huang, Chuan-Xin[4].,Zhang, Jian-Hua[5].,...&Zhang, Zhi-Lin[8].(2017).Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors.IEEE TRANSACTIONS ON ELECTRON DEVICES,64,2216-2220.
MLA	Zhao, Cheng-Yu[1],et al."Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors".IEEE TRANSACTIONS ON ELECTRON DEVICES 64(2017):2216-2220.

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