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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文 SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497 作者:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Zesheng Ji 收藏  |  浏览/下载：30/0  |  提交时间：2018/05/23 The immiscibility of InAlN ternary alloy 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 26600 Guijuan Zhao; Xiaoqing Xu; Huijie Li; Hongyuan Wei; Dongyue Han; Zesheng Ji; Yulin Meng; Lianshan Wang; Shaoyan Yang 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10 Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates 期刊论文 nanoscale res lett, 2016, 卷号: 11, 期号: 1, 页码: 270 Huijie Li; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang 收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10 Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 20787 Guijuan Zhao; Lianshan Wang; Shaoyan Yang; Huijie Li; Hongyuan Wei; Dongyue Han; Zhanguo Wang 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10 Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned 期刊论文 nanoscale, 2015, 卷号: 7, 期号: 39, 页码: 16481-16492 Huijie Li; Guijuan Zhao; Susu Kong; Dongyue Han; Hongyuan Wei; Lianshan Wang; Zhen Chen; Shaoyan Yang 收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29 Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures 期刊论文 physica e: low-dimensional systems and nanostructures, 2015, 卷号: 66, 页码: 116-119 Huijie Li; Guipeng Liu; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Shaoyan Yang; Zhen Chen; Zhanguo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/29 X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文 applied physics letters, 2013, 卷号: 102, 期号: 13, 页码: 132104 Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua 收藏  |  浏览/下载：20/0  |  提交时间：2013/08/27 Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文 applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109 Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo 收藏  |  浏览/下载：26/0  |  提交时间：2014/03/17 Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文 crystal research and technology, 2013, 卷号: 48, 期号: 5, 页码: 321-327 Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan 收藏  |  浏览/下载：18/0  |  提交时间：2013/08/27 Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS