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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Effects of V/III ratio on a-plane GaN epilayers with an InGaN interlayer 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 026801 Wang, JX; Wang, LS; Yang, SY; Li, HJ; Zhao, GJ; Zhang, H; Wei, HY; Jiao, CM; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20 Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 19, 页码: 193704 Li, HJ; Zhao, GJ; Liu, GP; Wei, HY; Jiao, CM; Yang, SY; Wang, LS; Zhu, QS 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 10-14 Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Growth and Characterization of an a-Plane InxGa1-xN on a r-Plane Sapphire 期刊论文 chinese physics letters, 2012, 卷号: 29, 期号: 11, 页码: 117103 Zhao GJ (Zhao Gui-Juan); Li ZW (Li Zhi-Wei); Wei HY (Wei Hong-Yuan); Liu GP (Liu Gui-Peng); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/26 Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 10-14 Li, ZW; Wei, HY; Xu, XQ; Zhao, GJ; Liu, XL; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文 journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25 Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏  |  浏览/下载：21/0  |  提交时间：2010/04/11 nanostructure  vapor phase transport  ZnO  semiconductor materials  PHYSICAL VAPOR-DEPOSITION  OPTICAL-PROPERTIES  THERMAL EVAPORATION  FIELD-EMISSION  NANOWIRES  NANORODS  MECHANISM  ARRAYS   Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744 Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏  |  浏览/下载：35/0  |  提交时间：2010/04/11 TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE  OPTICAL-PROPERTIES  ZINC-OXIDE  THIN-FILMS  VAPOR-DEPOSITION  SI SUBSTRATE  NANOWIRES  GROWTH  EMISSION  EPITAXY