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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328 Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ 收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05 SILICON NANOWIRES  SURFACE MIGRATION  NANOSTRUCTURES  CATALYST   Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage 期刊论文 carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124 Zhu XF; Li LX; Huang SL; Wang ZG; Lu GQ; Sun CH; Wang LZ 收藏  |  浏览/下载：25/3  |  提交时间：2011/07/05 IRRADIATION  NANOCAVITY   Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文 solid state communications, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303 Zhou, WZ (Zhou, W. Z.); Lin, T (Lin, T.); Shang, LY (Shang, L. Y.); Yu, G (Yu, G.); Huang, ZM (Huang, Z. M.); Guo, SL (Guo, S. L.); Gui, YS (Gui, Y. S.); Dai, N (Dai, N.); Chu, JH (Chu, J. H.); Cui, LJ (Cui, L. J.); Li, DL (Li, D. L.); Gao, HL (Gao, H. L.); Zeng, YP (Zeng, Y. P.) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 quantum well   Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4099-4104 Zhou WZ (Zhou Wen-Zheng); Lin T (Lin Tie); Shang LY (Shang Li-Yan); Huang ZM (Huang Zhi-Ming); Cui LJ (Cui Li-Jie); Li DL (Li Dong-Lin); Gao HL (Gao Hong-Ling); Zeng YP (Zeng Yi-Pine); Guo SL (Guo Shao-Ling); Gui YS (Gui Yong-Sheng); Chu JH (Chu Jun-Hao) 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As   Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well 期刊论文 solid state communications, 2007, 卷号: 142, 期号: 7, 页码: 393-397 Zhou WZ; Huang ZM; Qiu ZJ; Lin T; Shang LY; Li DL; Gao HL; Cui LJ; Zeng YP; Guo SL; Gui YS; Dai N; Chu JH 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 quantum wells   Magneto - Transport of electron symmetric and antisymmrtric states in highly doped InGaAs/InAlAs single quantum well 期刊论文 journal of infrared and millimeter waves, 2004, 卷号: 23, 期号: 5, 页码: 329-332 Qiu ZJ; Gui YS; Cui LJ; Zeng YP; Huang ZM; Shu XZ; Dai N; Guo SL; Chu JH 收藏  |  浏览/下载：173/32  |  提交时间：2010/03/09 InGaAs/InAlAs quantum well   The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543 作者:  Zhang JY;  Jiang DS 收藏  |  浏览/下载：81/0  |  提交时间：2010/08/12 photoluminescence  metalorganic chemical vapor deposition  epilayer  semiconducting II-VI materials  MOLECULAR-BEAM EPITAXY  GAP   The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344 作者:  Jiang DS 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 quantum wells  GaInNAs  strain-compensated GaNAs layers  MOLECULAR-BEAM EPITAXY  PHOTOLUMINESCENCE  LASERS  THRESHOLD