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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文 ieee journal of quantum electronics, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326 Huang JL (Huang, Jianliang); Ma WQ (Ma, Wenquan); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cui K (Cui, Kai); Cao YL (Cao, Yulian); Guo XL (Guo, Xiaolu); Shao J (Shao, Jun) 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/26 Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 17, 页码: 173511 Zhang, YH; Ma, WQ; Wei, Y; Cao, YL; Huang, JL; Cui, K; Guo, XL 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586 Cao YL (Cao Yu-Lian); Lian P (Lian Peng); Ma WQ (Ma Wen-Quan); Wang Q (Wang Qing); Wu XM (Wu Xu-Ming); He GR (He Guo-Rong); Li H (Li Hui); Wang XD (Wang Xiao-Dong); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  DIODE-LASERS  INTERFACE CHARACTERISTICS  GROWTH SEQUENCE  MOVPE GROWTH  LP-MOVPE  HETEROSTRUCTURES  HETEROJUNCTION  POWER  NM