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CORC

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High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO3 Interfaces 期刊论文
PHYSICAL REVIEW LETTERS, 2018, 卷号: 121, 期号: 11, 页码: -
作者:  Zhang, HR;  Yun, Y;  Zhang, XJ;  Zhang, H;  Ma, Y
收藏  |  浏览/下载：26/0  |  提交时间：2018/12/25
Construction of KAGRA: an underground gravitational-wave observatory 期刊论文
PROGRESS OF THEORETICAL AND EXPERIMENTAL PHYSICS, 2018, 期号: 1
作者:  Akutsu, T.;  Ando, M.;  Araki, S.;  Araya, A.;  Arima, T.
收藏  |  浏览/下载：118/0  |  提交时间：2018/12/28
Si3.5Sb2Te3 Phase Change Material for Low-Power Phase Change Memory Application 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 10, 页码: 108101-108101
Ren, K; Rao, F; Song, ZT; Wu, LC; Zhou, XL; Xia, MJ; Liu, B; Feng, SL; Xi, W; Yao, DN; Chen, BM
收藏  |  浏览/下载：13/0  |  提交时间：2012/03/24
High-Current Multi-Finger Mesa InGaAs/InP DHBTs 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 12, 页码: 128502-128502
Jin, Z; Cheng, W; Su, YB; Liu, XY; Xu, AH; Qi, M
收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24
Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 3, 页码: 38502-38502
Cheng, W; Jin, Z; Su, YB; Liu, XY; Xu, AH; Qi, M
收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211
Chen, T; Hong, T; Pan, JQ; Chen, WX; Cheng, YB; Wang, Y; Ma, XB; Liu, WL; Zhao, LJ; Ran, GZ; Wang, W; Qin, GG
收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24
High-speed InGaAs/InP double heterostructure bipolar transistor with high breakdown voltage 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 7, 页码: 2683-2685
Jin, Z; Su, YB; Cheng, W; Liu, XY; Xu, AH; Qi, M
收藏  |  浏览/下载：8/0  |  提交时间：2012/03/24
High current multi-finger InGaAs/InP double heterojunction bipolar transistor with the maximum oscillation frequency 253 GHz 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 8, 页码: 3075-3078
Jin, Z; Su, YB; Cheng, W; Liu, XY; Xu, AH; Qi, M
收藏  |  浏览/下载：10/0  |  提交时间：2012/03/24
High-breakdown-voltage submicron InGaAs/InP double heterojunction bipolar transistor with f(t)=170 GHz and f(max)=253GHz 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 7, 页码: 2686-2689
Jin, Z; Su, YB; Cheng, W; Liu, XY; Xu, AH; Qi, M
收藏  |  浏览/下载：14/0  |  提交时间：2012/03/24
Silicon-on-insulating multi-layers for total-dose irradiation hardness 期刊论文
CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 8, 页码: 1600-1603
Zhang, EX; Yi, WB; Liu, XH; Chen, M; Liu, ZL; Xi, W
收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24

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