Silicon-on-insulating multi-layers for total-dose irradiation hardness

	Silicon-on-insulating multi-layers for total-dose irradiation hardness
	Zhang, EX ; Yi, WB ; Liu, XH ; Chen, M ; Liu, ZL ; Xi, W
刊名	CHINESE PHYSICS LETTERS
	2004
卷号	21 期号:8 页码:1600-1603
关键词	IMPLANTATION OXIDES SIMOX
ISSN号	0256-307X
通讯作者	Zhang, EX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95385]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, EX,Yi, WB,Liu, XH,et al. Silicon-on-insulating multi-layers for total-dose irradiation hardness[J]. CHINESE PHYSICS LETTERS,2004,21(8):1600-1603.
APA	Zhang, EX,Yi, WB,Liu, XH,Chen, M,Liu, ZL,&Xi, W.(2004).Silicon-on-insulating multi-layers for total-dose irradiation hardness.CHINESE PHYSICS LETTERS,21(8),1600-1603.
MLA	Zhang, EX,et al."Silicon-on-insulating multi-layers for total-dose irradiation hardness".CHINESE PHYSICS LETTERS 21.8(2004):1600-1603.