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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots 期刊论文 physica e: low-dimensional systems and nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689 Li, Y.Q.; Wang, X.D.; Xu, X.N.; Liu, W.; Yang, F.H.; Zeng, Y.P. 收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14 Electron absorption  Indium arsenide  Logic circuits  MODFETS  Modulation  Two dimensional electron gas   Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, N; Li, N; Liu, ZL; Yu, F; Li, GH 收藏  |  浏览/下载：38/0  |  提交时间：2010/03/09 SOI  MOSFET   Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET 期刊论文 semiconductor science and technology, 2008, 卷号: 23, 期号: 12, 页码: art. no. 125015 Wang, NJ; Li, N; Liu, ZL; Yu, F 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08 Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451 Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Liu, ZL (Liu Zhong-Li); Zhang, ZX (Zhang Zheng-Xuan); Li, N (Li Ning); Li, GH (Li Guo-Hua) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 SIMOX   The design and verification of FPGA CAD toolset 会议论文 international symposium on integrated circuits, singapore`, singapore, sep 26-28, 2007 Zhou HB; N, MH; Chen S; Liu ZL 收藏  |  浏览/下载：32/0  |  提交时间：2010/03/09 Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET 期刊论文 chinese physics, 2005, 卷号: 14, 期号: 3, 页码: 565-570 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/17 SOIPMOSFET   Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 3, 页码: 654-656 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：108/0  |  提交时间：2010/03/17 SCATTERING   Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 SOI   Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 481-484 Zheng ZS; Liu ZL; Zhang GQ; Li N; Li GH; Ma HZ; Zhang EX; Zhang ZX; Wang X 收藏  |  浏览/下载：32/5  |  提交时间：2010/03/17 OXIDES   Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)