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科研机构
半导体研究所 [22]
内容类型
期刊论文 [19]
会议论文 [3]
发表日期
2011 [2]
2010 [1]
2008 [3]
2007 [2]
2006 [4]
2003 [3]
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半导体材料 [22]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:17/0
  |  
提交时间:2010/12/28
NARROW-GAP SEMICONDUCTOR
INVERSION-ASYMMETRY
QUANTUM DOTS
BAND
STATES
Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining
期刊论文
nano letters, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458
Ding F (Ding Fei)
;
Ji HX (Ji Hengxing)
;
Chen YH (Chen Yonghai)
;
Herklotz A (Herklotz Andreas)
;
Dorr K (Doerr Kathrin)
;
Mei YF (Mei Yongfeng)
;
Rastelli A (Rastelli Armando)
;
Schmidt OG (Schmidt Oliver G.)
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  |  
浏览/下载:243/38
  |  
提交时间:2010/09/20
Graphene
strain engineering
Gruneisen parameters
Raman spectroscopy
piezoelectric actuator
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL
;
Gaspar, J
;
Paul, O
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  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
Bulge test
fracture
pooled Weibull analysis
silicon nitride (Si3N4)
silicon oxide (SiO2)
Influence of different interlayers on growth mode and properties of InN by MOVPE
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241
Zhang, RQ
;
Liu, XL
;
Kang, TT
;
Hu, WG
;
Yang, SY
;
Jiao, CM
;
Zhu, QS
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  |  
浏览/下载:51/3
  |  
提交时间:2010/03/08
DEFECT STRUCTURE
EPITAXIAL GAN
BAND-GAP
Growth of c-oriented ZnO films on (001) SMO3 substrates by MOCVD
期刊论文
journal of crystal growth, 2008, 卷号: 311, 期号: 1, 页码: 200-204
作者:
Jia CH
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  |  
浏览/下载:253/27
  |  
提交时间:2010/03/08
Growth behavior
SrTiO3
MOCVD
ZnO
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
期刊论文
chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471
Liu Z (Liu Zhe)
;
Wang XL (Wang Xiao-Liang)
;
Wang JX (Wang Jun-Xi)
;
Hu GX (Hu Guo-Xin)
;
Guo LC (Guo Lun-Chun)
;
Li JM (Li Jin-Min)
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  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaN
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG
;
Liu, XL
;
Jiao, CM
;
Wei, HY
;
Kang, TT
;
Zhang, PF
;
Zhang, RQ
;
Fan, HB
;
Zhu, QS
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  |  
浏览/下载:55/4
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
WURTZITE-TYPE CRYSTALS
THIN-FILMS
ALUMINUM NITRIDE
INTRINSIC STRESS
GAN
SAPPHIRE
AIN
DEPOSITION
STRAIN
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
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  |  
浏览/下载:118/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 7, 页码: art.no.073507
作者:
Ye XL
;
Xu B
;
Jin P
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  |  
浏览/下载:45/0
  |  
提交时间:2010/04/11
REFLECTANCE DIFFERENCE SPECTROSCOPY
LAYER
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