CORC

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CORC

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Characteristics of charge density waves on the surfaces of quasi-one-dimensional charge-transfer complex layered organic crystals 期刊论文
physical review b, 2011, 卷号: 83, 期号: 12, 页码: article no.125434
Lin F; Huang XM; Qu SC; Fang ZY; Huang S; Song WT; Zhu X; Liu ZF
收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05
Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110) 期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7162-7166
Lin F (Lin Feng); Fang ZY (Fang Zheyu); Qu SC (Qu Shengchun); Huang S (Huang Shan); Song WT (Song Wentao); Chi LF (Chi Lifeng); Zhu X (Zhu Xing)
收藏  |  浏览/下载：18/0  |  提交时间：2010/11/30
Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866
Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG
收藏  |  浏览/下载：64/5  |  提交时间：2010/03/08
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:  Jin P;  Ye XL
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Fabrication of GdSi2 film by low-energy ion-beam implantation 期刊论文
journal of crystal growth, 2004, 卷号: 262, 期号: 1-4, 页码: 186-190
Li YL; Chen NF; Zhou JP; Song SL; Yang SY; Liu ZK
收藏  |  浏览/下载：44/14  |  提交时间：2010/03/09
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
作者:  Xu B
收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12
Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15

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