Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

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	Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
	Xu B
刊名	journal of crystal growth
	2003
卷号	247 期号:1-2 页码:49-54
关键词	photoluminescence molecular beam epitaxy nanomaterials semiconducting III-V materials SCANNING-TUNNELING-MICROSCOPY GROWTH INP
ISSN号	0022-0248
通讯作者	he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the structure and optical properties of in(ga)as grown with the introduction of ingaalas or inalas seed dots layers are investigated. the area density and size homogeneity of the upper ingaas dots are efficiently improved with the introduction of a layer of high-density buried dots. when the gaas spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. by analyzing the growth dynamics, we refer to it as an empty-core structure dot. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11682]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer[J]. journal of crystal growth,2003,247(1-2):49-54.
APA	Xu B.(2003).Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer.journal of crystal growth,247(1-2),49-54.
MLA	Xu B."Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer".journal of crystal growth 247.1-2(2003):49-54.