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GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy 期刊论文
OPTICS LETTERS, 2020, 卷号: 45, 期号: 1, 页码: 121-124
作者:  Tongbo Wei;   S. M. Islam;   Uwe Jahn;   Jianchang Yan;   Kevin Lee;   Shyam Bharadwaj;   Xiaoli Ji;   Junxi Wang;   Jinmin Li;   Vladimir Protasenko;   Huili (Grace) Xing;   Debdeep Jena
收藏  |  浏览/下载：31/0  |  提交时间：2021/11/30
Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn 期刊论文
SCIENTIFIC REPORTS, 2020, 卷号: 10, 期号: 1, 页码: 6161
作者:  Nan Wang;   Chunlai Xue;   Fengshuo Wan;   Yue Zhao;   Guoyin Xu;   Zhi Liu;   Jun Zheng;   Yuhua Zuo;   Buwen Cheng ;   Qiming Wang
收藏  |  浏览/下载：8/0  |  提交时间：2021/06/28
Silver-assisted growth of high-quality InAs1-xSbx nanowires by molecular-beam epitaxy 期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 46, 页码: 465602
作者:  Lianjun Wen;   Lei Liu;   Dunyuan Liao;   Ran Zhuo;   Dong Pan;   Jianhua Zhao
收藏  |  浏览/下载：42/0  |  提交时间：2021/05/24
Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular- beam epitaxy 期刊论文
Nanotechnology, 2019, 卷号: 31, 期号: 15, 页码: 1-10
作者:  Lianjun Wen;  Dong Pan;  Dunyuan Liao;  Jianhua Zhao
收藏  |  浏览/下载：24/0  |  提交时间：2020/07/30
High quality 2-µm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 3, 页码: 034202
作者:  Jin-Ming Shang ;   Jian Feng ;   Cheng-Ao Yang ;   Sheng-Wen Xie ;   Yi Zhang ;   Cun-Zhu Tong ;   Yu Zhang ;   Zhi-Chuan Niu
收藏  |  浏览/下载：15/0  |  提交时间：2020/07/30
The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文
IEEE Access, 2019, 卷号: 7, 页码: 102710-102716
作者:  Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE
收藏  |  浏览/下载：29/0  |  提交时间：2020/07/30
High material quality growth of AlInAsSb thin films on GaSb substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028503
作者:  Fa-Ran Chang ;   Rui-Ting Hao ;   Tong-Tong Qi ;   Qi-Chen Zhao ;   Xin-Xing Liu ;   Yong Li ;   Kang Gu ;   Jie Guo ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
收藏  |  浏览/下载：16/0  |  提交时间：2020/07/30
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
作者:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
收藏  |  浏览/下载：21/0  |  提交时间：2020/07/30
Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 4, 页码: 042403
作者:  X. P. Zhao;   J. Lu;   S. W. Mao;   Z. F. Yu;   D. H. Wei;   J. H. Zhao
收藏  |  浏览/下载：17/0  |  提交时间：2019/11/18
Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs Sb1− Buffer Layers 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 1, 页码: 018101
作者:  Hai-Long Yu;  Hao-Yue Wu;  Hai-Jun Zhu;  Guo-Feng Song;  Yun Xu
收藏  |  浏览/下载：11/0  |  提交时间：2018/11/30

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