Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy | |
X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao | |
刊名 | APPLIED PHYSICS LETTERS
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2018 | |
卷号 | 112期号:4页码:042403 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29254] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao. Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2018,112(4):042403. |
APA | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao.(2018).Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,112(4),042403. |
MLA | X. P. Zhao; J. Lu; S. W. Mao; Z. F. Yu; D. H. Wei; J. H. Zhao."Spontaneous perpendicular exchange bias effect in L1 0 -MnGa/FeMn bilayers grown by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 112.4(2018):042403. |
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