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科研机构
半导体研究所 [37]
内容类型
期刊论文 [36]
会议论文 [1]
发表日期
2012 [1]
2011 [1]
2010 [4]
2009 [17]
2008 [7]
2006 [1]
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学科主题
半导体物理 [11]
半导体材料 [7]
光电子学 [2]
半导体器件 [1]
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A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors
期刊论文
materials research society symposium proceedings, 2012, 卷号: 1396, 页码: 101-106
Hurwitz, Elisa N
;
Kucukgok, Bahadir
;
Melton, Andrew G
;
Liu, ZhiQiang
;
Lu, Na
;
Ferguson, Ian T
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/05/13
Effect of transverse electric field on helical edge states in a quantum spin-hall system
期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 22, 页码: 3
作者:
Liu, Genhua
;
Zhou, Guanghui
;
Chen, Yong-Hai
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/05/12
Cadmium compounds
Ii-vi semiconductors
Mercury compounds
Quantum hall effect
Semiconductor quantum wells
Spin hall effect
Wide band gap semiconductors
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure
期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3
作者:
Zhang, L.
;
Ding, K.
;
Yan, J. C.
;
Wang, J. X.
;
Zeng, Y. P.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Aluminium compounds
Electron gas
Gallium compounds
Iii-v semiconductors
Mocvd
Polarisation
Semiconductor doping
Semiconductor thin films
Wide band gap semiconductors
Strong circular photogalvanic effect in zno epitaxial films
期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3
作者:
Zhang, Q.
;
Wang, X. Q.
;
Yin, C. M.
;
Xu, F. J.
;
Tang, N.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Ii-vi semiconductors
Photoconductivity
Photovoltaic effects
Semiconductor epitaxial layers
Spin-orbit interactions
Valence bands
Wide band gap semiconductors
Zinc compounds
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Strong circular photogalvanic effect in ZnO epitaxial films
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907
Zhang Q (Zhang Q.)
;
Wang XQ (Wang X. Q.)
;
Yin CM (Yin C. M.)
;
Xu FJ (Xu F. J.)
;
Tang N (Tang N.)
;
Shen B (Shen B.)
;
Chen YH (Chen Y. H.)
;
Chang K (Chang K.)
;
Ge WK (Ge W. K.)
;
Ishitani Y (Ishitani Y.)
;
Yoshikawa A (Yoshikawa A.)
收藏
  |  
浏览/下载:276/88
  |  
提交时间:2010/09/07
II-VI semiconductors
photoconductivity
photovoltaic effects
semiconductor epitaxial layers
spin-orbit interactions
valence bands
wide band gap semiconductors
zinc compounds
Localized-surface-plasmon enhanced the 357 nm forward emission from znmgo films capped by pt nanoparticles
期刊论文
Nanoscale research letters, 2009, 卷号: 4, 期号: 10, 页码: 1121-1125
作者:
You, J. B.
;
Zhang, X. W.
;
Dong, J. J.
;
Song, X. M.
;
Yin, Z. G.
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Znmgo films
Photoluminescence
Localized surface plasmon
Nanoparticles
Lattice polarity detection of inn by circular photogalvanic effect
期刊论文
Applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: 3
作者:
Zhang, Q.
;
Wang, X. Q.
;
He, X. W.
;
Yin, C. M.
;
Xu, F. J.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/05/12
Iii-v semiconductors
Indium compounds
Nondestructive testing
Photoconductivity
Radiation effects
Semiconductor thin films
Wide band gap semiconductors
Enhancement of field emission of the zno film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: 3
作者:
You, J. B.
;
Zhang, X. W.
;
Cai, P. F.
;
Dong, J. J.
;
Gao, Y.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
Atomic force microscopy
Field emission
Hydrogen
Ii-vi semiconductors
Plasma materials processing
Sputter deposition
Wide band gap semiconductors
Work function
Zinc compounds
Measurement of polar c-plane and nonpolar a-plane inn/zno heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: 3
作者:
Yang, A. L.
;
Song, H. P.
;
Wei, H. Y.
;
Liu, X. L.
;
Wang, J.
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Conduction bands
Iii-v semiconductors
Ii-vi semiconductors
Indium compounds
Interface states
Polarisation
Semiconductor heterojunctions
Valence bands
Wide band gap semiconductors
X-ray photoelectron spectra
Zinc compounds
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