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	Strong circular photogalvanic effect in zno epitaxial films
	Zhang, Q.1; Wang, X. Q.1; Yin, C. M.1; Xu, F. J.1; Tang, N.1; Shen, B.1; Chen, Y. H.2; Chang, K.2; Ge, W. K.3; Ishitani, Y.4
刊名	Applied physics letters
	2010-07-26
卷号	97期号:4页码:3
关键词	Ii-vi semiconductors Photoconductivity Photovoltaic effects Semiconductor epitaxial layers Spin-orbit interactions Valence bands Wide band gap semiconductors Zinc compounds
ISSN号	0003-6951
DOI	10.1063/1.3467835
通讯作者	Zhang, q.()
英文摘要	We report a strong circular photogalvanic effect (cpge) in zno epitaxial films under interband excitation. it is observed that cpge current is as large as 100 na/w in zno, which is about one order in magnitude higher than that in inn film while the cpge currents in gan films are not detectable. the possible reasons for the above observations are the strong spin orbit coupling in zno or the inversed valence band structure of zno. (c) 2010 american institute of physics. [doi:10.1063/1.3467835]
WOS关键词	BAND-STRUCTURE ; QUANTUM-WELLS ; SEMICONDUCTORS ; SPIN ; INN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000281059200027
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427953
专题	半导体研究所
通讯作者	Zhang, Q.
作者单位	1.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China 2.CAS, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Tsinghua Univ, Dept Phys, Beijing 100871, Peoples R China 4.Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan
推荐引用方式 GB/T 7714	Zhang, Q.,Wang, X. Q.,Yin, C. M.,et al. Strong circular photogalvanic effect in zno epitaxial films[J]. Applied physics letters,2010,97(4):3.
APA	Zhang, Q..,Wang, X. Q..,Yin, C. M..,Xu, F. J..,Tang, N..,...&Yoshikawa, A..(2010).Strong circular photogalvanic effect in zno epitaxial films.Applied physics letters,97(4),3.
MLA	Zhang, Q.,et al."Strong circular photogalvanic effect in zno epitaxial films".Applied physics letters 97.4(2010):3.

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