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Anisotropic spin splitting in step quantum wells 期刊论文
Chinese physics letters, 2009, 卷号: 26, 期号: 3, 页码: 4
作者:  Hao Ya-Fei;  Chen Yong-Hai;  Hao Guo-Dong;  Wang Zhan-Guo
收藏  |  浏览/下载:11/0  |  提交时间:2019/05/12
Anisotropic Spin Splitting in Step Quantum Wells 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 3, 页码: art. no. 037103
作者:  Hao GD
收藏  |  浏览/下载:89/31  |  提交时间:2010/03/08
Grating optimization and experiment on high-power distributed feedback lasers 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 3, 页码: 1613-1616
Fu SH (Fu Sheng-Hui); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui)
收藏  |  浏览/下载:48/0  |  提交时间:2010/03/29
Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903
作者:  Xu YQ
收藏  |  浏览/下载:121/0  |  提交时间:2010/04/11
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures 期刊论文
journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Kong LM (Kong Lingmin); Cai JF (Cai Jiafa); Wu ZY (Wu Zhengyun); Gong Z (Gong Zheng); Fang ZD (Fang Zhidan); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载:50/0  |  提交时间:2010/04/11
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 477-484
作者:  Ye XL;  Liang S;  Pan JQ
收藏  |  浏览/下载:40/0  |  提交时间:2010/04/11
Structure and photoluminescence study of InGaAs/GaAs quantum dots grown via cycled (InAs)(n)/(GaAs)(n) monolayer deposition 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 3, 页码: 1154-1157
He J; Wang XD; Xu B; Wang ZG; Qu SC
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
作者:  Jiang DS;  Zhang Y;  Zhang Y
收藏  |  浏览/下载:9/0  |  提交时间:2010/10/29
LASERS  GAIN  GAAS  
Determination of the values of hole-mixing coefficients due to interface and electric field in gaas/alxga1-xas superlattices 期刊论文
Physical review b, 2001, 卷号: 63, 期号: 11, 页码: 6
作者:  Ye, XL;  Chen, YH;  Wang, JZ;  Wang, ZG;  Yang, Z
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy 期刊论文
journal of vacuum science & technology b, 2001, 卷号: 19, 期号: 1, 页码: 197-201
作者:  Xu B
收藏  |  浏览/下载:98/6  |  提交时间:2010/08/12


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