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| Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者: Wang C
  收藏 | 浏览/下载：69/3 | 提交时间：2011/07/05
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| Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏 | 浏览/下载：57/2 | 提交时间：2011/07/05
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| Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 10, 页码: 103003-1-103003-5
作者: Deng Qingwen; Hou Qifeng; Xiao Hongling
收藏 | 浏览/下载：16/0 | 提交时间：2011/08/16 |
| Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者: Jin P; Wei HY; Song HP
收藏 | 浏览/下载：310/47 | 提交时间：2010/03/08
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| Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者: Song HP; Wei HY; Zhang B
收藏 | 浏览/下载：198/0 | 提交时间：2010/03/08
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| Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏 | 浏览/下载：231/42 | 提交时间：2010/03/08
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| XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 3, 页码: 1677-1682
Sheng SR (Sheng Shuran); Hao HY (Hao Huiying); Diao HW (Diao Hongwei); Zeng XB (Zeng Xiangbo); Xu Y (Xu Ying); Liao XB (Liao Xianbo); Monchesky TL (Monchesky Theodore L.)
收藏 | 浏览/下载：54/0 | 提交时间：2010/03/29
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| Impact of wide bandgap p-type nc-Si on the performance of a-Si solar cells 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Deng X; Wang W; Han S; Povolny H; Du W; Liao X; Xiang X
收藏 | 浏览/下载：11/0 | 提交时间：2010/11/15 |
| High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Liu JP; Huang DD; Li JP; Sun DZ; Kong MY
收藏 | 浏览/下载：27/0 | 提交时间：2010/08/12
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| Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions 期刊论文
mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 期号: 0, 页码: art.no.g6.4
Ho WY; Fong WK; Surya C; Tong KY; Lu LW; Ge WK
收藏 | 浏览/下载：36/0 | 提交时间：2010/08/12
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