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Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2014, 卷号: 47, 期号: 12, 页码: 125303
Chen, XW; Jia, CH; Chen, YH; Wang, HT; Zhang, WF
收藏  |  浏览/下载：16/0  |  提交时间：2015/04/02
Molecular beam epitaxial growth of AlSb/InAsSb heterostructures 期刊论文
applied surface science, 2014, 卷号: 313, 页码: 479-483
Zhang, YW; Zhang, Y; Guan, M; Cui, LJ; Li, YB; Wang, BQ; Zhu, ZP; Zeng, YP
收藏  |  浏览/下载：14/0  |  提交时间：2015/03/25
Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (001) substrates 期刊论文
applied surface science, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Li, YB; Zhang, Y; Zhang, YW; Wang, BQ; Zhu, ZP; Zeng, YP
收藏  |  浏览/下载：17/0  |  提交时间：2013/02/07
Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates 期刊论文
applied surface science, 2012, 卷号: 258, 期号: 17, 页码: 6571-6575
Li, Yanbo; Zhang, Yang; Zhang, Yuwei; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping
收藏  |  浏览/下载：26/0  |  提交时间：2013/05/07
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05

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