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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Origins of magnetism in transition metal doped Cul 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043713
Wang J (Wang Jing); Li JB (Li Jingbo); Li SS (Li Shu-Shen)
收藏  |  浏览/下载：86/0  |  提交时间：2010/10/11
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104
作者:  Wang LJ;  Yang H;  Jiang DS;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：78/0  |  提交时间：2010/03/08
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801
作者:  You JB;  Zhang XW;  Fan YM;  Tan HR
收藏  |  浏览/下载：368/49  |  提交时间：2010/03/08
Temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3440-3443
Dou, XM; Sun, BQ; Xiong, YH; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载：69/1  |  提交时间：2010/03/08
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY; Meng, ZM; Dai, QF; Wu, LJ; Guo, Q; Hu, W; Liu, SH; Lan, S; Yang, T
收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.); Zhu HL (Zhu H. L.); Ye XL (Ye X. L.); Wang W (Wang W.)
收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11

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