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| Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文
applied physics a-materials science & processing, 2007, 卷号: 86, 期号: 1, 页码: 19-22
Li RY (Li R. Y.); Wang ZG (Wang Z. G.); Xu B (Xu B.); Jin P (Jin P.); Guo X (Guo X.); Chen M (Chen M.)
  收藏 | 浏览/下载：59/0 | 提交时间：2010/04/11
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| Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文
journal of vacuum science & technology b, 2005, 卷号: 23, 期号: 5, 页码: 2137-2140
作者: Xu B ; Jin P
收藏 | 浏览/下载：141/18 | 提交时间：2010/03/17
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| Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 6, 页码: 759-763
Peng YC; Fu GS; Yu W; Li SQ; Wang YL
收藏 | 浏览/下载：54/15 | 提交时间：2010/03/09
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏 | 浏览/下载：99/8 | 提交时间：2010/08/12
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| Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 期刊论文
thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y
收藏 | 浏览/下载：159/11 | 提交时间：2010/08/12
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏 | 浏览/下载：12/0 | 提交时间：2010/11/15
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| Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文
1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y
收藏 | 浏览/下载：20/0 | 提交时间：2010/11/15
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| Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition 期刊论文
applied physics a-materials science & processing, 2000, 卷号: 70, 期号: 4, 页码: 449-451
Luo GL; Chen PY; Lin XF; Tsien P; Fan TW
收藏 | 浏览/下载：51/0 | 提交时间：2010/08/12
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| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏 | 浏览/下载：31/0 | 提交时间：2010/08/12
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