Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics

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	Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics
	Peng YC ; Fu GS ; Yu W ; Li SQ ; Wang YL
刊名	semiconductor science and technology
	2004
卷号	19 期号:6 页码:759-763
关键词	EXCIMER-LASER
ISSN号	0268-1242
通讯作者	peng, yc, hebei univ, coll elect & informat engn, baoding 071002, peoples r china.
中文摘要	nanocrystalline silicon (nc-si) films were prepared by pulsed laser annealed crystallization of amorphous silicon (alpha-si) films on sio2-coated quartz or glass substrates. the effect of laser energy density on structural characteristics of nc-si films was investigated. the ni-induced crystallization of the a-si films was also discussed. the surface morphology and microstructure of these films were characterized by scanning electron microscopy, high-resolution electron microscopy, atomic force microscopy and raman scattering spectroscopy. the results show that not only can the alpha-si films be crystallized by the laser annealing technique, but also the size of si nanocrystallites can be controlled by varying the laser energy density. their average size is about 4-6 nm. we present a surface tension and interface strain model used for describing the laser annealed crystallization of the alpha-si films. the doping of ni atoms may effectively reduce the threshold value of laser energy density to crystallize the alpha-si films, and the flocculent-like si nanostructures could be formed by ni-induced crystallization of the alpha-si films.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8032]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng YC,Fu GS,Yu W,et al. Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics[J]. semiconductor science and technology,2004,19(6):759-763.
APA	Peng YC,Fu GS,Yu W,Li SQ,&Wang YL.(2004).Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics.semiconductor science and technology,19(6),759-763.
MLA	Peng YC,et al."Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics".semiconductor science and technology 19.6(2004):759-763.