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科研机构
半导体研究所 [19]
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期刊论文 [19]
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2011 [2]
2010 [6]
2009 [1]
2008 [2]
2007 [1]
2005 [3]
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半导体材料 [19]
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Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:
Yang T
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浏览/下载:53/5
  |  
提交时间:2011/07/05
PHOTOLUMINESCENCE
EMISSION
INALAS
Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 11, 页码: 113540
Zhou, X.L.
;
Chen, Y.H.
;
Ye, X.L.
;
Xu, Bo
;
Wang, Z.G.
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浏览/下载:17/0
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提交时间:2012/06/14
Ground state
Photoluminescence
Quantum efficiency
Semiconductor quantum dots
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
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  |  
浏览/下载:220/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Broadband external cavity tunable quantum dot lasers with low injection current density
期刊论文
optics express, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922
作者:
Wang WY
;
Jin P
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  |  
浏览/下载:171/44
  |  
提交时间:2010/05/24
LIGHT-EMITTING-DIODES
NM TUNING RANGE
SUPERLUMINESCENT DIODES
WELL LASER
EMISSION
SPECTROSCOPY
SPECTRUM
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
;
Xu DW (Xu D. W.)
;
Yoon SF (Yoon S. F.)
;
Liang S (Liang S.)
;
Zhao LJ (Zhao L. J.)
;
Wasiak M (Wasiak M.)
;
Czyszanowski T (Czyszanowski T.)
;
Nakwaski W (Nakwaski W.)
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浏览/下载:31/0
  |  
提交时间:2010/11/14
VAPOR-PHASE EPITAXY
PHOTOVOLTAGE SPECTROSCOPY
PHOTOLUMINESCENCE
MODES
Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers
期刊论文
japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Wang ZG (Wang Zhan-Guo)
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  |  
浏览/下载:87/11
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提交时间:2010/08/17
DEPENDENCE
WELL
A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 018104
作者:
Jin P
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  |  
浏览/下载:99/17
  |  
提交时间:2010/04/04
quantum-dot
tunable laser
external cavity
broadband tuning
NM TUNING RANGE
SUPERLUMINESCENT DIODES
LIGHT-SOURCE
WELL LASER
SPECTROSCOPY
SPECTRUM
Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102
Xu PF (Xu Peng-Fei)
;
Yang T (Yang Tao)
;
Ji HM (Ji Hai-Ming)
;
Cao YL (Cao Yu-Lian)
;
Gu
;
YX (Gu Yong-Xian)
;
Liu Y (Liu Yu)
;
Ma WQ (Ma Wen-Quan)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:203/54
  |  
提交时间:2010/04/13
energy states
optical modulation
quantum dot lasers
THRESHOLD CURRENT
WELL
GAIN
Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well
期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 11, 页码: 1315-1318
Wang J (Wang Jun)
;
Li SS (Li Shu-Shen)
;
Lu YW (Lue Yan-Wu)
;
Liu XL (Liu Xiang-Lin)
;
Yang SY (Yang Shao-Yan)
;
Zhu QS (Zhu Qin-Sheng)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:276/95
  |  
提交时间:2010/03/08
Binding energy
Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2645-2648
作者:
Xu B
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  |  
浏览/下载:42/4
  |  
提交时间:2010/03/08
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