Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors
	Xu B
刊名	chinese physics letters
	2008
卷号	25 期号:7 页码:2645-2648
关键词	ABSORPTION
ISSN号	0256-307x
通讯作者	wang, zg, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangzc@semi.ac.cn
中文摘要	theoretical calculation of electronic energy levels of an asymmetric inas/ingaas/gaas quantum-dots-in-a-well (dwell) structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. our calculated results show that the electronic energy levels in quantum dots (qds) increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. furthermore, the results also show that the electronic energy levels in qds decrease as the size of qds and the width of quantum well (qw) in the asymmetric dwell structure increase. additionally, the effects of asymmetry, the size of qds and the width of qw on the response peak of asymmetry dwell photodetectors are also discussed.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6586]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors[J]. chinese physics letters,2008,25(7):2645-2648.
APA	Xu B.(2008).Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors.chinese physics letters,25(7),2645-2648.
MLA	Xu B."Electronic energy levels in an asymmetric quantum-dots-in-a-well structure for infrared photodetectors".chinese physics letters 25.7(2008):2645-2648.