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VGF growth of high quality InAs single crystals with low dislocation density 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125350
作者:  Jun Yang;   Wei Lu;   Manlong Duan;   Hui Xie;   Guiying Shen;   Jingmin Liu;   Zhiyuan Dong;  Youwen Zhao
收藏  |  浏览/下载：8/0  |  提交时间：2021/12/16
VGF growth of high quality InAs single crystals with low dislocation density 期刊论文
Journal of Crystal Growth, 2019, 卷号: 531, 页码: 125350
作者:  Jun Yang;  Wei Lu;  Manlong Duan;  Hui Xie;  Guiying Shen;  Jingmin Liu;  Zhiyuan Dong;  Youwen Zhao
收藏  |  浏览/下载：9/0  |  提交时间：2020/07/31
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers 期刊论文
Journal of Crystal Growth, 2018, 卷号: 488, 页码: 8–15
作者:  Haining Chong ;   Zhewei Wang ;   Chaonan Chen ;   Zemin Xu ;   Ke Wu ;   Lan Wu ;   Bo Xu ;   Hui Ye
收藏  |  浏览/下载：39/0  |  提交时间：2019/11/15
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文
journal of vacuum science & technology b, 2014, 卷号: 32, 期号: 5, 页码: 051207
He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Zhang, SM; Yang, H
收藏  |  浏览/下载：28/0  |  提交时间：2015/03/25
Low threading dislocation density in GaN films grown on patterned sapphire substrates 期刊论文
journal of semiconductors, 2012, 卷号: 33, 期号: 11, 页码: 113002
Liang, Meng; Wang, Guohong; Li, Hongjian; Li, Zhicong; Yao, Ran; Wang, Bing; Li, Panpan; Li, Jing; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/07
Cathodoluminescence of yellow and blue luminescence in undoped semi-insulating gan and n-gan 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: 4
作者:  Hou Qi-Feng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Yang Cui-Bai
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:  Li JB
收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14

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