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科研机构
半导体研究所 [44]
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期刊论文 [36]
会议论文 [8]
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2011 [7]
2010 [2]
2009 [1]
2008 [1]
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2006 [4]
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半导体材料 [44]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Microwave Study of FeSe(0.3)Te(0.7) Thin Film by TE(011)-Mode Sapphire Dielectric Resonator
期刊论文
ieee transactions on applied superconductivity, 2011, 卷号: 21, 期号: 3, 页码: 599-601
Wu, Y
;
Zhou, SY
;
Wang, XY
;
Cao, LX
;
Zhang, XQ
;
Luo, S
;
He, YS
;
Barannik, AA
;
Cherpak, NT
;
Skresanov, VN
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  |  
浏览/下载:17/0
  |  
提交时间:2012/02/06
Cavity resonator
microwave measurement
multi-gap
node
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang
;
Wei, Tongbo
;
Duan, Ruifei
;
Yang, Jiankun
;
Huo, Ziqiang
;
Zeng, Yiping
;
Xu, Shu
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2012/06/14
Carrier concentration
Etching
Gallium alloys
Optical properties
Point defects
Raman spectroscopy
Semiconducting gallium compounds
Vapor phase epitaxy
Vapors
Microwave Study of FeSe0.3Te0.7 Thin Film by TE011-Mode Sapphire Dielectric Resonator
期刊论文
ieee transactions on applied superconductivity, 2011, 卷号: 21, 期号: 3, 页码: 599-601
作者:
Wang XY
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  |  
浏览/下载:58/4
  |  
提交时间:2011/07/15
Cavity resonator
microwave measurement
multi-gap
node
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate
期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:
Tang AW
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  |  
浏览/下载:82/5
  |  
提交时间:2011/07/15
SILVER NANORODS
HOT-SPOTS
ACTIVE SUBSTRATE
NANOWIRE ARRAYS
SPECTROSCOPY
SERS
NANOPARTICLES
SENSITIVITY
REDUCTION
STABILITY
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
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  |  
浏览/下载:43/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
收藏
  |  
浏览/下载:220/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films
期刊论文
physical review b, 2010, 卷号: 81, 期号: 23, 页码: art. no. 235201
Khazen K (Khazen Kh.)
;
von Bardeleben HJ (von Bardeleben H. J.)
;
Cantin JL (Cantin J. L.)
;
Mauger A (Mauger A.)
;
Chen L (Chen L.)
;
Zhao JH (Zhao J. H.)
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/06/18
AMORPHOUS FERROMAGNET
CURIE-TEMPERATURE
CRITICAL-BEHAVIOR
RENORMALIZATION GROUP
DIPOLAR INTERACTIONS
CRITICAL EXPONENTS
MAGNETIC EQUATION
ALLOYS
STATE
SEMICONDUCTORS
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:68/0
  |  
提交时间:2010/03/08
aluminium compounds
gallium arsenide
III-V semiconductors
internal stresses
reflectivity
semiconductor heterojunctions
semiconductor quantum wells
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