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浏览/检索结果: 共17条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    发表日期：2008     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods 期刊论文 Solid state communications, 2008, 卷号: 148, 期号: 9-10, 页码: 480-483 作者:  Yang, Zhaozhu;  Xue, Chengshan;  Zhuang, Huizhao;  Wang, Gongtang;  Chen, Jinhua 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Gallium  Nanorods  Crystal growth  Optical properties   Effects of the sputtering time of zno buffer layer on the quality of gan thin films 期刊论文 Applied surface science, 2008, 卷号: 254, 期号: 21, 页码: 6766-6769 作者:  Xue, Shoubin;  Zhang, Xing;  Huang, Ru;  Zhuang, Huizhao 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Gan films  Zno buffer layers  Sputtering time   Influence of different ammoniating time on tb-catalyzed gan nanorods 期刊论文 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 6, 页码: 4422-4425 作者:  Chen, Jinhua;  Xiu, Xianwu;  Qin, Lixia;  Li, Hong;  Yang, Zhaozhu 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12 Gan  Nanorods  Ammoniating  Magnetron sputtering  Catalyst   Microstructure and optical properties of nonpolar m-plane gan films grown on m-plane sapphire by hydride vapor phase epitaxy 期刊论文 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 作者:  Wei, Tongbo;  Duan, Ruifei;  Wang, Junxi;  Li, Jinmin;  Huo, Ziqiang 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Hvpe  Gan  Sapphire  Nonpolar  Semipolar   Oxygen pressure dependences of structure and properties of zno films deposited on amorphous glass substrates by pulsed laser deposition 期刊论文 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 作者:  Zhu, Bai Lin;  Zhao, Xing Zhong;  Xu, Sheng;  Su, Fu Hai;  Li, Guo Hua 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Laser ablation  Zinc oxide  Deposition process  Optical properties  Electrical properties and measurements   Influence of v/iii ratio on the structural and photoluminescence properties of in0.52alas/in0.53gaas metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文 Chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123 作者:  Gao Hong-Ling;  Zeng Yi-Peng;  Wang Bao-Qiang;  Zhu Zhan-Ping;  Wang Zhan-Guo 收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12 Molecular beam epitaxy  Semiconducting iii-v materials  High electron mobility transistors   Effect of ammoniating temperature on morphologic and optical properties of gan nanostructured materials 期刊论文 Materials letters, 2008, 卷号: 62, 期号: 1, 页码: 23-26 作者:  Zhuang Huizhao;  Xue Shoublin 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Gan nanomaterials  Optical properties  Deposition  Ammoniating technique   Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 作者:  Yin ZG;  Zhang XW 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 thermophotovoltaic cell   Enhancement of electroluminescence in p-i-n structures with nano-crystalline si/sio(2) multilayers 期刊论文 Semiconductor science and technology, 2008, 卷号: 23, 期号: 1, 页码: 4 作者:  Chen, D. Y.;  Wei, D. Y.;  Xu, J.;  Han, P. G.;  Wang, X. 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test 会议论文 3rd ieee international conference of nano/micro engineered and molecular systems, sanya, peoples r china, jan 06-09, 2008 Zhou, W; Yang, JL; Li, Y; Yang, FH 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09 bulge test  fracture property  silicon nitride  Weibull distribution function