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	Enhancement of electroluminescence in p-i-n structures with nano-crystalline si/sio(2) multilayers
	Chen, D. Y.1,2; Wei, D. Y.1,2; Xu, J.1,2; Han, P. G.1,2; Wang, X.1,2; Ma, Z. Y.1,2; Chen, K. J.1,2; Shi, W. H.3; Wang, Q. M.3
刊名	Semiconductor science and technology
	2008
卷号	23期号:1页码:4
ISSN号	0268-1242
DOI	10.1088/0268-1242/23/1/015013
通讯作者	Xu, j.(junxu@nju.edu.cn)
英文摘要	Nano-crystalline si/sio(2) multilayers were prepared by alternately changing the ultra-thin amorphous si film deposition and the in situ plasma oxidation process followed by the post-annealing treatments. well-defined periodic structures can be achieved with 2.5 nm thick sio(2) sublayers. it is shown that the size of formed nano-crystalline si is about 3 nm. room temperature electroluminescence can be observed and the spectrum contains two luminescence bands located at 650 nm and 520 nm. in order to improve the hole injection probability, p-i-n structures containing a nanocrystalline si/sio(2) luminescent layer were designed and fabricated on different p-type substrates. it is found that the turn-on voltage of p-i-n structures is obviously reduced and the luminescence intensity increases by 50 times. it is demonstrated that the use of a heavy-doped p-type substrate can increase the luminescence intensity more efficiently compared with the light-doped p-type substrate due to the enhanced hole injection.
WOS关键词	SILICON NANOCRYSTALS ; POROUS SILICON ; MOS STRUCTURES ; LUMINESCENCE ; PHOTOLUMINESCENCE ; SUPERLATTICE ; FILMS
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000253279700013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427213
专题	半导体研究所
通讯作者	Xu, J.
作者单位	1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Chen, D. Y.,Wei, D. Y.,Xu, J.,et al. Enhancement of electroluminescence in p-i-n structures with nano-crystalline si/sio(2) multilayers[J]. Semiconductor science and technology,2008,23(1):4.
APA	Chen, D. Y..,Wei, D. Y..,Xu, J..,Han, P. G..,Wang, X..,...&Wang, Q. M..(2008).Enhancement of electroluminescence in p-i-n structures with nano-crystalline si/sio(2) multilayers.Semiconductor science and technology,23(1),4.
MLA	Chen, D. Y.,et al."Enhancement of electroluminescence in p-i-n structures with nano-crystalline si/sio(2) multilayers".Semiconductor science and technology 23.1(2008):4.

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